reverse voltage: 20 - 100 volts forward current: 1.0 amp cdbhd120l-g thru 1100l-g features mechanical data smd diode specialist comchip mds0702004 a page 1 ? low vf schottky barrier chips in bridge ? metal-semiconductor junction with guard ring ? high surge current capability ? silicon epitaxial planar chips ? for use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications ? lead-free part, meet rohs requirements ? case: mini-dip bridge (to-269aa) plastic molded case ? epoxy: ul94-v0 rated flame retardant ? terminals: solderable per mil-std-750 method 2026 ? polarity: as marked on body ? mounting position: any ? weight: 0.0078 ounces, 0.22 grams unit :inch(mm) .008(0.2) max. .106(2.7) .090(2.3) .114(2.90) .094(2.40) .051(1.3) .035(0.9) .193(4.90) .177(4.50) .067(1.7) .057(1.3) .031(0.8) .019(0.5) .016(0.41) .006(0.15) + C . 1 6 5 ( 4 . 2 ) . 1 5 0 ( 3 . 8 ) . 2 7 5 ( 7 . 0 ) m a x . ~ ~ .043(1.1) .027(0.7) .106(2.7) .090(2.3) c .02(0.5) ~ + ~ C mini-dip cdbhd - symbols 120l 140l 160l 180l 1100l units maximum recurrent peak reverse voltage v rrm 20 40 60 80 100 volts maximum rms voltage v rms 14 28 42 56 70 volts maximum dc blocking voltage v dc 20 40 60 80 100 volts maximum average forward rectified current 0.2x0.2 (5.0x5.0mm) copper pad area, see figure 1 peak forward surge current 8.3ms single half sine-wave superimp osed on i fsm 30.0 amps rated load (jedec me thod) maximum forward voltage at 1.0a (note 1) v f 0.44 0.625 0.75 volts maximum dc reverse current t a = 25c at rated dc blocking voltage t a = 100 c typical junction capacitance (note 2) c j 250 125 pf typical thermal resistance (note 3) r ja 85.0 r jl 20.0 operating junction temperature range t j -55 ~ +125 c storage temperature range t stg -55 ~ +150 c maximum rating and electrical characteristics ratings at 25c ambient temperature unless otherwise specified i av 1.0 amps i r ma c/w 0.5 20.0 : note 1. pulse test: 300s pu lse wi dth, 1% du ty cy cle 2. me asured at 1.0mh z an d ap plied reverse vo ltage of 4.0 volts 3. therma l resistance from junction to am bient and from junction to lead p.c.b. mo unted on 0. 2x0.2(5.0x5.0mm ) co pper pa d ar eas. low vf schottky bridge rectifiers
smd diode specialist comchip low vf schottky bridge rectifiers mds0702004a page 2 reverse voltage (volts) 1 10 100 percent of rated peak reverse voltage ( %) fig.1 - forward current derating curve average forward current (a) 0 25 50 75 100 125 150 175 lead temperature ( c) fig. 2 - maximum non-repetitive peak forward surge current peak forward surge current (a) number of cycles at 60 hz 1.2 1.0 0.8 0.6 0.4 0.2 fig. 3 - typical instantaneour forward characteristics fig. 4a - typical reverse characteristics instantaneous forward voltage (volts) instantaneous forward current (a) instantaneous reverse current (ma) fig. 5 - typical junction capacitance 0.1 1.0 10 100 junction capacitance (pf) 100 1000 fig. 4b - typeical reverse characteristic 1 10 100 t l =110c 8.3ms single half sine-wave (jedec method) cdbhd120l-g - 160l-g cdbhd180l-g - 1100l-g single phase half wave 60hz resistive or inductive load 3.75(9.5mm) lead length 0 0.2 0.4 0.6 0.8 1.0 pulse width =300s 1% duty cycle, t j =25c 10 1.0 0.1 0.01 cdbhd120l-g - 140l-g cdbhd160l-g cdbhd180l-g - 1100l-g 10 t j =25c f=1.0mhz instantaneous reverse current (a) percent of rated peak reverse voltage ( %) t j =25c t j =75c t j =125c cdbhd120l-g - 160l-g cdbhd180l-g - 1100l-g 0 20 40 60 80 100 120 140 100 10 1.0 0.1 0.01 0.001 1000 100 10 1.0 0.1 0.01 0 20 40 60 80 100 t j =25c t j =100c t j =125c t j =150c cdbhd120l-g - 140l-g cdbhd160l-g cdbhd180l-g - 1100l-g
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